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march 2011 doc id 14994 rev 2 1/22 22 stb6n52k3, std6n52k3 stf6n52k3, STP6N52K3 n-channel 525 v, 1 , 5 a, d2pak, dpak, to-220fp, to-220 supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected application switching applications description these devices are made using the supermesh3? power mosfet technology that is obtained via improvements applied to stmicroelectronics? s upermesh? technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d pw stb6n52k3 525 v < 1.2 5 a 70 w std6n52k3 5 a (1) 1. limited by package 25 w stf6n52k3 5 a 70 w STP6N52K3 1 3 dpak to-220fp 1 2 3 1 2 3 to-220 1 3 d2pak d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stb6n52k3 6n52k3 d2pak tape and reel std6n52k3 dpak stf6n52k3 to-220fp tu b e STP6N52K3 to-220 www.st.com
contents stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 2/22 doc id 14994 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 electrical ratings doc id 14994 rev 2 3/22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 d2pak dpak to-220fp v ds drain-source voltage (v gs = 0) 525 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5 5 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 3 3 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 20 20 (1) a p tot total dissipation at t c = 25 c 70 25 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 2.5 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 110 mj dv/dt (3) 3. i sd 5 a, di/dt = 400 v, v ds peak v (br)dss , v dd = 80% v (br)dss. peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junc tion temperature 150 c table 3. thermal data symbol parameter value unit to- 22 0 d2 pak dpak to- 2 20f p r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-pcb thermal resistance junction-pcb max 30 50 c/w r thj-amb thermal resistance junction-ambient max 62.5 62.5 c/w t l maximum lead temperature for soldering purpose 300 300 c
electrical characteristics stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 4/22 doc id 14994 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 525 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 2.5 a 1 1.2 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 670 54 10 - pf pf pf c oss eq (1) 1. c oss eq . is defined as a constant equivalent capacitance giving the same charging time as c oss when v d s increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 240 v - tbd - pf r g intrinsic gate resistance f = 1 mhz open drain - 4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 420 v, i d = 5 a, v gs = 10 v (see figure 20 ) - 26 4 15 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 260 v, i d = 2.5 a, r g = 4.7 , v gs = 10 v (see figure 19 ) - 10 11 31 18 - ns ns ns ns
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 electrical characteristics doc id 14994 rev 2 5/22 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 5 20 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 24 ) - 206 1.4 14 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) - 233 1.7 15 ns c a table 8. gate-source zener diode symbol parameter test conditions min typ max unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 v
electrical characteristics stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 6/22 doc id 14994 rev 2 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak figure 7. thermal impedance for dpak i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 88 5 3 v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 88 54v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 88 55v1
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 electrical characteristics doc id 14994 rev 2 7/22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 6 4 2 0 0 10 v d s (v) 20 (a) 5 15 25 8 10 5v 6v 7v v g s =10v am0 88 56v1 i d 3 2 1 0 0 4 v g s (v) 8 (a) 2 6 4 5 6 7 v d s =15v am0 88 57v1 v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =420v i d =5a 3 0 12 3 00 200 100 0 400 450 v d s v g s 3 50 250 150 50 am0 88 5 8 v1 r d s (on) 1.1 1.0 0.9 0. 8 0 2 i d (a) ( ) 1 3 1.2 1. 3 1.4 4 am0 88 59v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 88 60v1 e o ss 1.5 1.0 0.5 0 0 100 v d s (v) ( j) 400 2.0 200 3 00 2.5 3 .0 500 600 3 .5 4.0 am0 88 61v1
electrical characteristics stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 8/22 doc id 14994 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs starting tj v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 am0 88 62v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 am0 88 6 3 v1 v s d 0 2 i s d (a) (v) 1 5 3 4 0. 3 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-50c t j =150c t j =25c 67 8 am0 88 65v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 am0 88 64v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 10 20 3 0 40 120 140 50 60 70 8 0 90 100 110 i d =2.5a v dd =50 v am0 88 66v1
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 test circuits doc id 14994 rev 2 9/22 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefo rm figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 10/22 doc id 14994 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 package mechanical data doc id 14994 rev 2 11/22 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 12/22 doc id 14994 rev 2 figure 25. d2pak (to-263) drawing 0079457_p
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 package mechanical data doc id 14994 rev 2 13/22 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 14/22 doc id 14994 rev 2 figure 26. dpak (to-252) drawing 006 8 772_g
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 package mechanical data doc id 14994 rev 2 15/22 figure 27. to-220fp drawing table 11. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 16/22 doc id 14994 rev 2 table 12. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 package mechanical data doc id 14994 rev 2 17/22 figure 28. to-220 type a drawing 00159 88 _typea_rev_ s
packaging mechanical data stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 18/22 doc id 14994 rev 2 5 packaging mechanical data figure 29. d2pak footprint (a) table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a. all dimension ar e in millimeters
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 packaging mechanical data doc id 14994 rev 2 19/22 figure 30. dpak footprint (b) table 14. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty 2500 p1 7.9 8.1 bulk qty 2500 p2 1.9 2.1 r40 w 15.7 16.3 b. all dimension ar e in millimeters
packaging mechanical data stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 20/22 doc id 14994 rev 2 figure 31. tape figure 32. reel leader no component s component s no component s trailer 100mm min s t a rt 160mm min 400mm min. leader and trailer end s e a led with cover t a pe u s er direction of feed top cover t a pe am0 88 52v1 a d b f u ll r a di us t a pe s lot in core for t a pe s t a rt g me asu red at h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t am0 88 51v1
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 revision history doc id 14994 rev 2 21/22 6 revision history table 15. document revision history date revision changes 03-sep-2008 1 initial release. 21-feb-2011 2 ? added new package, mechanical data: d2pak; ? added new package, mechanical data: to-220; ? document status promoted from preliminary data to datasheet.
stb6n52k3, std6n52k3, stf6n52k3, STP6N52K3 22/22 doc id 14994 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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